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STH60N10 Datasheet

 Datasheet for SGS-Thomson Microelectronics
Description:Power dissipation 200 W Transistor polarity N Channel Current Id cont. 60 A Current Idm pulse 240 A Pitch lead 5.45 mm Voltage Vds max 100 V Resistance Rds on 0.025 R Temperature current 25 ?C
Manufacturer:SGS-Thomson Microelectronics
Temp. range:Min: - | Max: -
Package:TO-218
Pins:-
Datasheet:STH60N10.PDF (246Kb)


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#
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1.
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STH60N10.PDF


STH60N10 Datasheet

STH60N10 Datasheet

N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORS

STH60N10 Datasheet

 
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