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| # | Component part name | Component Description | Manufacturer | PDF size | | 1. | WMBT3904 | NPN epitaxial silicon high voltage transistor Power dissipation 225mW. Collector current(max) 0.2A | WINGS | 66K | | 2. | WMBT3906 | PNP epitaxial silicon high voltage transistor Power dissipation 225mW. Collector current(max) 0.2A | WINGS | 66K | | 3. | WMBT5401LT1 | PNP silicon transistor. Collector-emitter voltage -150V. Collector-base voltage -160V. Emitter-base voltage -5.0V | WINGS | 34K | | 4. | WMBT5551LT1 | NPN silicon transistor. Collector-emitter voltage 160V. Collector-base voltage 180V. Emitter-base voltage 6.0V | WINGS | 36K | | 5. | WMBTA42 | NPN epitaxial silicon transistor. Power dissipation 225mW. Collector current(max) 500mA. | WINGS | 73K | | 6. | WMBTA92 | NPN epitaxial silicon transistor. Power dissipation 225mW. Collector current(max) 500mA. | WINGS | 71K |
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WMBT3906.PDF
WMBT3906 DatasheetNPN epitaxial silicon transistor. Power dissipation 225mW. Collector current(max) 500mA.
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